Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having junction gate
Reexamination Certificate
2005-08-23
2005-08-23
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having junction gate
C438S192000, C438S193000, C438S645000, C438S662000, C438S693000, C438S708000, C438S745000
Reexamination Certificate
active
06933186
ABSTRACT:
A method of improving the tolerance of a back-end-of-the-line (BEOL) thin film resistor is provided. Specifically, the method of the present invention includes an anodization step which is capable of converting a portion of base resistor film into an anodized region. The anodized resistor thus formed has a sheet resistivity that is higher than that of the base resistor film.
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Cotte John M.
Stein Kenneth J.
Subbanna Seshadri
Volant Richard P.
Berry Renee R.
International Business Machines - Corporation
Nelms David
Schnurmann H. Daniel
Scully Scott Murphy & Presser
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