Method for avoiding plasma damage

Details Method for avoiding plasma damage Method for avoiding plasma damage

1999-10-14

2000-08-29

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

438514, 438506, 438542, H01L 2131

Patent

active

061108413

ABSTRACT:
A method for avoiding plasma damage. In a semiconductor substrate of a first conductive type, a second conductive type well is formed. While forming the second conductive well, a high-energy dopant is doped into the semiconductor substrate. The high energy makes a depletion region between the substrate and the well have defects. A leakage path is thus formed. The leakage path can direct any charged carriers coming from plasma to avoid accumulation of the charged carriers in the well. Thus, the electrical characteristics of the well or even the quality of gate oxide formed thereon is prevented from being degraded.

REFERENCES:
patent: 5908312 (1999-06-01), Cheung et al.
patent: 5998299 (1999-12-01), Krishnan
J. P. McVittie, "Plasma Charging Damage: An Overview", 1996 1st International symposium on Plasma Process-Induced Damage, May 13-14, 1996, American Vacuum Society, 1996.

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