Method for avoiding interference in a CMOS sensor

Details Method for avoiding interference in a CMOS sensor Method for avoiding interference in a CMOS sensor

1999-03-25

2000-03-28

Trinh, Michael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438197, 438 48, 438 75, H01L 218238, H01L 2100

Patent

active

060431156

ABSTRACT:
A method for avoiding interference in a CMOS sensor. A substrate at least comprising a CMOS sensor, an interconnect layer and an inter-layer dielectric layer thereon is provided. A passivation layer is formed over the substrate. A photolithography and etching process is performed to remove a part of the passivation layer and a part of the inter-layer dielectric layer above a sensor region of the CMOS sensor. The sensor region is thus exposed. An oxide layer is formed on the exposed sensor region. A micro-lens is formed on the oxide layer.

REFERENCES:
patent: 4841348 (1989-06-01), Shizukuishi et al.
patent: 5420634 (1995-05-01), Matsumoto
patent: 5681760 (1997-10-01), Park
patent: 5945722 (1999-08-01), Tsuei et al.
patent: 5986297 (1999-11-01), Guidash et al.

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