Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1996-12-05
1999-02-23
Niebling, John F.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438302, H01L 218238, H01L 21336
Patent
active
058743294
ABSTRACT:
The present invention comprises a method for controlling a threshold voltage through a semiconductor substrate of a first conductivity type (the type being an n- or p- type in a MOSFET) without the need for a blanket implant for either long or short channel devices. A gate structure having opposed lateral edges is formed adjacent a surface of the semiconductor substrate and over a channel region of the substrate. The substrate is rotated around a rotation axis normal to the surface of the substrate to a first rotation position. Ions of a first conductivity type are then implanted into the channel region, using the gate structure as a mask, at an oblique angle relative to the surface normal of the substrate. The substrate is then rotated to a second rotation position approximately 180 degrees from the first rotation position. Ions of the first conductivity type are then implanted into the channel region, using the gate structure as a mask, at the oblique angle relative to the surface of the substrate.
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Henrickson Lindor E.
Neary Paul
Lebentritt Michael L
LSI Logic Corporation
Niebling John F.
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