Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Reexamination Certificate
2007-01-09
2007-01-09
Rosasco, S. (Department: 1756)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
C430S328000
Reexamination Certificate
active
09894230
ABSTRACT:
A method for increasing etching selectivity of a developed silicon-containing photoresist layer on a non-silicon containing photoresist layer on a substrate. The developed silicon-containing photoresist layer includes polymer chains containing silicon. Next, the developed silicon-containing photoresist layer and uncovered portions of the non-silicon containing photoresist layer are exposed to an ultraviolet (UV) light, where the UV light emanates from a UV generating agent, such as neon, xenon, helium, hydrogen, or krypton gas in an inert gas (e.g., argon, etc.) plasma. A top portion of the developed silicon-containing photoresist layer is then converted to a hardened layer, where the hardened layer is created by cross-linking the polymer chains containing silicon and the cross-linking is activated by the UV light. Next, an etch is performed on the uncovered portions of the non-silicon containing photoresist layer and the substrate using the hardened layer.
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Grant & Hackh's Chemical Dictionary, 5th Edition published by McGraw-Hill in 1987, p. 7.
Chen Richard
Ko Francis
Lee Charlie
Lam Research Corporation
Martine & Penilla & Gencarella LLP
Rosasco S.
Ruggles John
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