Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-03-08
2011-03-08
Huynh, Andy (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S257000, C438S264000, C438S286000, C257SE21057, C257SE21059, C257SE21618, C257SE21619
Reexamination Certificate
active
07902031
ABSTRACT:
A method for creating NAND flash memory. Source implantations are performed at a first implantation angle to areas between stacked gate structures of a NAND string. Drain implantations are performed at a second implantation angle to areas between the stacked gate structures. The implantations can dope a source line area while not doping a bit line contact area, and providing an additional implantation for the bit line contact area, or dope the bit line contact area while not doping the source line area, followed by an additional implantation for the source line area, or dope neither the source line area nor the bit line contact area, followed by additional implantations for the source line area and the bit line contact area.
REFERENCES:
patent: 4939690 (1990-07-01), Momodomi et al.
patent: 5190887 (1993-03-01), Tang et al.
patent: 5355006 (1994-10-01), Iguchi
patent: 5432106 (1995-07-01), Hong
patent: 5570315 (1996-10-01), Tanaka et al.
patent: 5638327 (1997-06-01), Dallabora
patent: 5712814 (1998-01-01), Fratin
patent: 5716885 (1998-02-01), Kim et al.
patent: 5770502 (1998-06-01), Lee
patent: 5774397 (1998-06-01), Endoh et al.
patent: 5783457 (1998-07-01), Hsu
patent: 5830788 (1998-11-01), Hiroki
patent: 5837584 (1998-11-01), Lu
patent: 5891774 (1999-04-01), Ueda et al.
patent: 5896314 (1999-04-01), Chen
patent: 5963808 (1999-10-01), Lu
patent: 6008094 (1999-12-01), Krivokapic et al.
patent: 6030869 (2000-02-01), Odake
patent: 6046935 (2000-04-01), Takeuchi et al.
patent: 6066531 (2000-05-01), Akiyama
patent: 6101128 (2000-08-01), Yamauchi
patent: 6130134 (2000-10-01), Chen
patent: 6168637 (2001-01-01), Randolph
patent: 6265292 (2001-07-01), Parat
patent: 6297098 (2001-10-01), Lin
patent: 6300656 (2001-10-01), Ueno
patent: 6320236 (2001-11-01), Krivokapic et al.
patent: 6329250 (2001-12-01), Sakui
patent: 6384457 (2002-05-01), Tyagi
patent: 6456528 (2002-09-01), Chen
patent: 6522580 (2003-02-01), Chen et al.
patent: 6534787 (2003-03-01), Hsu
patent: 6620682 (2003-09-01), Lee
patent: 6632686 (2003-10-01), Keshavarzi
patent: 6689658 (2004-02-01), Wu
patent: 6703659 (2004-03-01), Chan
patent: 6724035 (2004-04-01), Fujio
patent: 6744668 (2004-06-01), Van Buskirk
patent: 6859397 (2005-02-01), Lutze et al.
patent: 6917542 (2005-07-01), Chen et al.
patent: 7161833 (2007-01-01), Hemink
patent: 7294882 (2007-11-01), Hemink
patent: 7534690 (2009-05-01), Hemink et al.
patent: 7790562 (2010-09-01), Hemink et al.
patent: 2001/0005620 (2001-06-01), Tanigami
patent: 2002/0008276 (2002-01-01), Fukumoto et al.
patent: 2002/0100930 (2002-08-01), Yaegashi
patent: 2002/0190306 (2002-12-01), Sasago et al.
patent: 2004/0051133 (2004-03-01), Sugita
patent: 2007/0015332 (2007-01-01), Hemink
Li, et al., “Effects of Source Resistance and Bit Line Column Leakage on HCI Programming,” Technology Solution Organization, Freescale Semiconductor, pp. 57-60, (downloaded Sep. 2004).
Yoshikawa, et al., “An Asymmetrical Lightly Doped Source Cell for Virtual Ground High-Density EPROM's,” IEEE Transactions on Electron Devices, vol. 17, No. 4, Apr. 1990, pp. 1046-1051.
International Search Report and the Written Opinion dated Mar. 23, 2006, in International Appln. No. PCT/US2005/031279 filed Aug. 25, 2005.
312 Amendment dated Sep. 12, 2007, in U.S. Appl. No. 10/952,689, filed Sep. 28, 2004.
Notice of Allowance dated Jul. 3, 2007, in U.S. Appl. No. 10/952,689, filed Sep. 28, 2004.
Amendment dated May 9, 2007, in U.S. Appl. No. 10/952,689, filed Sep. 28, 2004.
Office Action dated Mar. 7, 2007, in U.S. Appl. No. 10/952,689, filed Sep. 28, 2004.
Amendment dated Feb. 8, 2007, in U.S. Appl. No. 10/952,689, filed Sep. 28, 2004.
Office Action dated Nov. 17, 2006, in U.S. Appl. No. 10/952,689 filed, Sep. 28, 2004.
Amendment dated Aug. 31, 2006, in U.S. Appl. No. 10/952,689, filed Sep. 28, 2004.
Office Action dated Apr. 27, 2006, in U.S. Appl. No. 10/952,689, filed Sep. 28, 2004.
Amendment dated Mar. 14, 2006, in U.S. Appl. No. 10/952,689 filed Sep. 28, 2004.
Office Action dated Feb. 16, 2006, in U.S. Appl. No. 10/952,689, filed Sep. 28, 2004.
Notice of Allowance dated Jan. 12, 2009, in U.S. Appl. No. 11/469,281, filed Aug. 31, 2006.
Amendment dated Dec. 8, 2008, in U.S. Appl. No. 11/469,281, filed Aug. 31, 2006.
Office Action dated Oct. 7, 2008, in U.S. Appl. No. 11/469,281, filed Aug. 31, 2006.
Amendment dated Jun. 25, 2008, in U.S. Appl. No. 11/469,281, filed Aug. 31, 2006.
Office Action dated May 14, 2008, in U.S. Appl. No. 11/469,281, filed Aug. 31, 2006.
Amendment dated Mar. 20, 2008, in U.S. Appl. No. 11/469,281, filed Aug. 31, 2006.
Office Action dated Feb. 21, 2008, in U.S. Appl. No. 11/469,281, filed Aug. 31, 2006.
Notice of Allowance dated May 20, 2010, in U.S. Appl. No. 12/419,637, filed Apr. 7, 2009.
Amendment dated May 10, 2010, in U.S. Appl. No. 12/419,637, filed Apr. 7, 2009.
Office Action dated Apr. 26, 2010, in U.S. Appl. No. 12/419,637, filed Apr. 7, 2009.
Hemink Gerrit Jan
Sato Shinji
Huynh Andy
SanDisk Corporation
Vierra Magen Marcus & DeNiro LLP
LandOfFree
Method for angular doping of source and drain regions for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for angular doping of source and drain regions for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for angular doping of source and drain regions for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2655898