Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1997-05-21
1999-05-04
Powell, William
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
216 6, 216 18, 438738, 438743, 257774, H01L 2100
Patent
active
058997482
ABSTRACT:
The present invention discloses a noel method for anchoring a via/contact or the forming of a capacitor having increasing capacitance in a semiconductor device by utilizing alternating layers of BPTEOS oxide and TEOS oxide and a deep UV photoresist such that toroidal-shaped cavities can be formed at the interfaces between the BPTEOS oxide layers and the TEOS oxide layers during the formation of the via/contact opening or the capacitor opening by a plasma etching process. The number of cavities formed, i.e., the number of anchors formed on the via/contact or capacitor, can be suitably adjusted by the number of BPTEOS oxide layer deposited on the semiconductor structure. Each BPTEOS oxide layer produces two anchors on the via/contact or the capacitor. The deep UV photoresist layer should contain a photo-acid-generator such that hydrogen ions are emitted when the photoresist layer is subjected to UV radiation and heating which accelerates the hydrogen ion generation process. The hydrogen ions generated combines with the fluorine contained in the oxide forming HF for etching away the interface between the two different oxide layers where boron ions and phosphorous ions are saturated at such interfaces.
REFERENCES:
patent: 4543707 (1985-10-01), Ito et al.
patent: 5677222 (1997-10-01), Tseng
Tao Hun-Jan
Tsai Chia Shiung
Powell William
Taiwan Semiconductor Manufacturing Co. Ltd.
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