Semiconductor device manufacturing: process – With measuring or testing – Electrical characteristic sensed
Patent
1996-02-12
2000-09-26
Nelms, David
Semiconductor device manufacturing: process
With measuring or testing
Electrical characteristic sensed
438 15, H01L 2166
Patent
active
061241423
ABSTRACT:
To provide a minute foreign matter analysis method and device wherein the observation, analysis and estimation of minute foreign matter is permitted by linking the device coordinate of a particle inspection device and those of other analysis devices with by far higher accuracy.
A minute foreign matter analysis method comprising the steps of: determining the position of a minute foreign substance on the surface of a sample in a particle test unit; transferring said sample onto a coordinate stage of an analysis unit; inputting the position determined by said particle test unit for the minute foreign substance to the coordinate stage of the analysis unit; and analyzing the contents of the relevant minute foreign substance wherein at least one of the unit coordinate to be employed in said particle test unit and the unit coordinate to be employed in said analysis unit is previously corrected using a standard wafer which has a scale on the surface so that coordination systems of said particle test unit and said analysis unit can be linked each other.
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M.W. Cresswell, et al., "Test Structure for the In-Plane Locations of Projected Features with Nanometer-Level Accuracy Traceable to a Coordinate Measurement System," Proc. IEEE Int. Conference on Microelectronic Test Structures, vol. 6, Mar. 1993.
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Hattori, Takeshi, Sakuo Koyata, "An Automated Particle Detection and Identification System in VLSI Wafer Processing," Solid State Technology. 34(1991) Sep., No. 9, Tulsa, OK. pp. s1-s6.
Fujino Naohiko
Karino Isamu
Ohmori Masashi
Wakiyama Shigeru
Yasutake Masatoshi
Berry Renee R.
Nelms David
Seiko Instruments Inc.
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