Method for adjusting voltage on a powered Faraday shield

Details Method for adjusting voltage on a powered Faraday shield Method for adjusting voltage on a powered Faraday shield

2005-04-19

2008-08-19

Olsen, Allan (Department: 1792)

Etching a substrate: processes

Gas phase etching of substrate

With measuring, testing, or inspecting

C438S714000, C438S729000

Reexamination Certificate

active

07413673

ABSTRACT:
An apparatus and method for adjusting the voltage applied to a Faraday shield of an inductively coupled plasma etching apparatus is provided. An appropriate voltage is easily and variably applied to a Faraday shield such that sputtering of a plasma can be controlled to prevent and mitigate deposition of non-volatile reaction products that adversely affect an etching process. The appropriate voltage for a particular etching process or step is applied to the Faraday shield by simply adjusting a tuning capacitor. It is not necessary to mechanically reconfigure the etching apparatus to adjust the Faraday shield voltage.

REFERENCES:
patent: 6422173 (2002-07-01), Nakajima

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