Method for activating nitride surfaces for amine-reactive...

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate

Reexamination Certificate

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C438S685000, C257SE21326

Reexamination Certificate

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07867915

ABSTRACT:
Provided is a method for controllably activating a surface for stable amine-reactive chemistries. A surface containing nitride is exposed to a plasma having a reactive species containing hydrogen for a period of time sufficient to activate the substrate for amine-reactive chemistries. Amine-reactive chemical processes can then be applied to the activated surface to reliably and controllably bond molecules directly to said surface. The method is designed to create stable primary amines on the nitride substrate, so that any subsequent amine-reactive chemistry may proceed in a controlled manner that is directly proportional to the density of surface amines so created.

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