Method for achieving increased control over interconnect...

Details Method for achieving increased control over interconnect... Method for achieving increased control over interconnect...

2006-10-17

2006-10-17

Sarkar, Asok K. (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S687000, C438S692000, C257SE21304

Reexamination Certificate

active

07122465

ABSTRACT:
According to one exemplary embodiment, a method comprises a step of etching a trench in an ILD layer, said trench having sidewalls and a bottom surface. The method further comprises determining a height of the sidewalls of the trench. The method further comprises filling the trench with interconnect metal such the interconnect metal extends above the trench. According to this exemplary embodiment, the method further comprises performing a CMP process to remove a portion of the interconnect metal. In the present invention, the height of the sidewalls of the trench is utilized to control an amount of polishing performed in the CMP process. The remaining portion of interconnect metal in the trench forms an interconnect line, where the thickness of the interconnect line is controlled by utilizing the height of the sidewalls of the trench to control the amount of polishing in the CMP process.

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