Method for achieving accurate SOG etchback selectivity

Details Method for achieving accurate SOG etchback selectivity Method for achieving accurate SOG etchback selectivity

1996-02-13

1998-10-13

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438699, 438710, H01L 21316

Patent

active

058211632

ABSTRACT:
A method for preventing oxygen microloading of an SOG layer. In one embodiment of the present invention, hydrogen is introduced into an etching environment. An etching step is then performed within the etching environment. During the etching step an SOG layer overlying a TEOS layer is etched until at least a portion of the underlying TEOS layer is exposed. The etching step continues and etches at least some of the exposed portion of the TEOS layer. During etching, the etched TEOS layer releases oxygen. The hydrogen present in the etching environment scavenges the released oxygen. As a result, the released oxygen does not microload the SOG layer. Thus, the etchback rate of the SOG layer is not significantly affected by the released oxygen, thereby allowing for controlled etchback of the SOG layer.

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