Method for a ring-like capacitor in a semiconductor memory devic

Details Method for a ring-like capacitor in a semiconductor memory devic Method for a ring-like capacitor in a semiconductor memory devic

1997-12-10

1999-06-01

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438254, H01L 218242

Patent

active

059096209

ABSTRACT:
This invention discloses a novel design to fabricate a ring-like capacitor in a semiconductor memory device for increasing the area of the capacitor electrodes. The ring-like conductive structure of the electrode of the capacitor includes a mushroom-shaped member having a flat-headed cap and a stem coupled to the source region of the semiconductor memory device, a solid cylindrical member disposed on the cap of the mushroom-shaped member, and a side-wall spacer being a hollow cylindrical member disposed on the cap of said mushroom-shaped member to increase the area of the capacitor electrodes thereby increasing the capacitance of the capacitor to provide a sufficient capacitance while maintaining high integration in semiconductor memory cells.

REFERENCES:
patent: 5104821 (1992-04-01), Choi et al.
patent: 5330614 (1994-07-01), Ahn
patent: 5643819 (1997-07-01), Tseng
patent: 5663093 (1997-09-01), Tseng et al.

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