Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-12-17
2000-04-18
Chaudhari, Chandra
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438657, H01L 218242
Patent
active
060514639
ABSTRACT:
A semiconductor fabrication method is provided for fabricating a data-storage capacitor for DRAM (dynamic random-access memory) device, which can allow the resulting capacitor to have a large capacitance and also allows a higher yield rate for the DRAM manufacture process. This method is used on a semiconductor substrate that is already formed with a transfer field effect transistor having a gate and a pair of source/drain regions. By this method, a dielectric layer, an etch-end layer, and an insulating layer are successively formed over the dielectric layer. Then, a contact hole is formed to expose a selected one of the source/drain regions of the transistor. In this contact hole and over the insulating layer, a main conductive trunk is formed, which is substantially T-shaped in cross section, with the root thereof being electrically connected to the source/drain region. Subsequently, an overhanging conductive branch is formed to the main conductive trunk. The overhanging conductive branch and the main conductive trunk in combination constitute a storage electrode. Then, an etching process is performed to etch away all the remaining insulating layer over the etch-end layer. After this, a dielectric film is formed over the storage electrode, and then a conductive block is formed over dielectric film to serve as a cell electrode. The cell electrode, the dielectric film, and the storage electrode in combination constitute the intended data-storage capacitor.
REFERENCES:
patent: 5726086 (1998-03-01), Wu
patent: 5909620 (1998-03-01), Wu
Chaudhari Chandra
Huang Jiawei
Patents J. C.
United Integrated Circuits Corp.
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