Method and system for using N.sub.2 plasma treatment to eliminat

Details Method and system for using N.sub.2 plasma treatment to eliminat Method and system for using N.sub.2 plasma treatment to eliminat

1997-01-21

2000-02-01

Chaudhuri, Olik

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438513, 438 12, H01L 21316

Patent

active

060202742

ABSTRACT:
The present invention provides a device and a method for substantially minimizing defects on the surface of the interface of the stop layer and the oxide layer during manufacturing of a semiconductor device. A method according to the present invention for minimizing defects in a semiconductor device, the method including the steps of depositing a stop layer, the stop layer having a surface; bombarding the surface of the stop layer with N2 using a power of at least approximately 320 W; and depositing the oxide layer over the stop layer.

REFERENCES:
patent: 4621277 (1986-11-01), Ito et al.
patent: 5536681 (1996-07-01), Jang et al.
patent: 5677234 (1997-10-01), Koo et al.

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