Method and system for source only reoxidation after junction imp

Details Method and system for source only reoxidation after junction imp Method and system for source only reoxidation after junction imp

1997-12-18

1999-08-17

Chaudhuri, Olik

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438529, H01L 218247, H01L 21266

Patent

active

059407093

ABSTRACT:
A system and method for providing a memory in a semiconductor is disclosed. In one aspect, the method and system include providing a source implant in the semiconductor, providing a first anneal of the source implant in an oxidizing agent, and providing a drain implant in the semiconductor after the first anneal. In another aspect, the method and system include providing a source implant and a drain implant in the semiconductor, providing a mask, and providing an anneal of the source implant, the drain implant, and the mask in an oxidizing agent. The mask exposes the source implant while limiting exposure of at least a portion of the drain implant.

REFERENCES:
patent: 4412378 (1983-11-01), Shinada
patent: 5510284 (1996-04-01), Yamauchi
patent: 5756381 (1998-05-01), Buynoski
patent: 5770491 (1998-06-01), Mametani
patent: 5776811 (1998-07-01), Wang et al.

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