Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-03-20
2007-03-20
Parker, Kenneth (Department: 2815)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S302000, C438S305000, C438S306000
Reexamination Certificate
active
09497320
ABSTRACT:
A method and system for providing a halo implant to a semiconductor device is disclosed. The method and system includes providing a thin photoresist layer that covers a substantial amount of an active area including a source region and a drain region of the semiconductor device. The method and system further includes providing the halo implant to the semiconductor device, using the thin photoresist layer as a mask.Utilizing this thin photoresist layer, taking into account other height variables, the source and drain regions can be opened only as needed. At a 45° angle, the implant can be delivered to all transistors in the circuit in the targeted area as well as getting only a large amount of the dose (up to ¾ of the dose) to the transistor edge which sits on the trench edge.
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NN9305233: “Self-Aligned Pocket Implantation Technology for Forming a Halo Type Device Using Selective Tungsten deposition.” IBM Technical Disclosure Bulleting, May 1993, vol. 36, No. 5, p. 233-236.
Ghaemmaghami Ahmad
Krivokapic Zoran
Swanson Brian
Advanced Micro Devices , Inc.
Díaz José R.
Parker Kenneth
Winstead Sechrest & Minick P.C.
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