Method and system for improving short channel effect on a...

Details Method and system for improving short channel effect on a... Method and system for improving short channel effect on a...

2005-04-12

2005-04-12

Thomas, Tom (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S258000, C438S260000, C438S261000, C438S267000, C257S314000, C257S315000, C257S316000, C257S317000, C257S318000

Reexamination Certificate

active

06878589

ABSTRACT:
A method and system for improving short channel effect on a floating gate device is disclosed. In one embodiment, a p-type implant is applied to a source side of the floating gate device. In addition, the present embodiment applies a p-type implant to a drain side of the floating gate device. The p-type implant to the drain side is performed at a different angle than the p-type implant to the source side. The p-type implant to the drain side is implanted to a greater depth than that of the p-type implant to the source side.

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