Method and system for improving particle beam lithography

Details Method and system for improving particle beam lithography Method and system for improving particle beam lithography

2011-03-01

2011-03-01

Smith, Matthew S (Department: 2823)

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

C257SE21030, C257SE21039, C430S005000, C716S030000

Reexamination Certificate

active

07897522

ABSTRACT:
A method for particle beam lithography, such as electron beam (EB) lithography, includes forming a plurality of cell patterns on a stencil mask and shaping one or more of the cell patterns with a polygonal-shaped contour. A first polygonal-shaped cell pattern is exposed to a particle beam so as to project the first polygonal-shaped cell pattern on a substrate. A second polygonal-shaped cell pattern, having a contour that mates with the contour of the first polygonal-shaped cell pattern, is exposed to the particle beam, such as an electron beam, so as to project the second polygonal-shaped cell pattern adjacent to the first polygonal-shaped cell pattern to thereby form a combined cell with the contour of the first polygonal-shaped cell pattern mated to the contour of the second polygonal-shaped cell pattern. The polygonal-shaped contour of the first and second cell patterns may comprise a rectilinear-shaped contour.

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