Method and system for improving critical dimension uniformity

Data processing: generic control systems or specific application – Specific application – apparatus or process – Product assembly or manufacturing

Reexamination Certificate

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C700S051000

Reexamination Certificate

active

07571021

ABSTRACT:
A method for improving critical dimension of a substrate is provided. Manufacturing data of a plurality of critical dimension deviations corresponding to a plurality of areas on the substrate is collected. A plurality of sensitivity data corresponding to the plurality of areas is also collected. A plurality of exposure dosage offsets corresponding to the plurality of areas are calculated based on the plurality of critical dimension deviations and the plurality of sensitivity data.

REFERENCES:
patent: 5402367 (1995-03-01), Sullivan et al.
patent: 5458732 (1995-10-01), Butler et al.
patent: 5503707 (1996-04-01), Maung et al.
patent: 5661669 (1997-08-01), Mozumder et al.
patent: 5838595 (1998-11-01), Sullivan et al.
patent: 6066419 (2000-05-01), Wu et al.
patent: 6566016 (2003-05-01), Ziger
patent: 6873938 (2005-03-01), Paxton et al.
patent: 7135344 (2006-11-01), Nehmadi et al.
patent: 7220990 (2007-05-01), Aghababazadeh et al.
patent: 7256055 (2007-08-01), Aghababazadeh et al.
patent: 7335880 (2008-02-01), Langer et al.
patent: 1517189 (2005-03-01), None
Vivien Chang et al., A Flexible Run-to-Run Process Control System for Advanced Etch Applications, Applied Materials, 6th European AEC/APC Conference, Dublin, Ireland, Apr. 6-8, 2005, 26 pages.
Tool Makers Get an Earful on APC and Standards, Solid State Technology, Delivering Surface Conditioning Technology for Real-World Advantages, Sep. 2003, 2 pages, WaferNews.
Gabe Barna et al., Wafer-to-Wafer Process Control, TI Technical Journal, MMST—Equipment and Processes, Sep.-Oct. 1992, pp. 76-86.
Andy Coleman et al., Controlling Equipment and Processes in MMST CIM, TI Technical Journal, MMST—CIM, Sep.-Oct. 1992, pp. 128-141.
Oscar D Crisalle et al., Adaptive Control of Photolithography, AICHe Journal, Jan. 1992, vol. 38, No. 1, pp. 1-14, American Institute of Chemical Engineering, New York, New York.
Steven A. Henck, In Situ Real-Time Ellipsometry for Film Thickness Measurement and Control, J. Vac. Sci. Technol. A 10(4), Jul./Aug. 1992, pp. 934-938, American Vacuum Society.
Steven A. Henck et al., In Situ Real-Time Ellipsometry for Real-Time Thickness Measurement and Control, Semiconductor Process Designe Center and Central Research Laboratories, Texas Instrument Incorporate, 1992, pp. 299-308, SPIE vol. 1803.
Graydon B. Larrabee, The Intelligent Microelectronics Factory of the Future, Semiconductor Process & Design Center, Texas Instruments, pp. 30-34, 1991 IEEE/SEMI Int'l Semiconductor Manufacturing Science Symposium.
Sovarong Leang et al., Application of Feed-Forward and Feedback Control to a Photolithography Sequence, Department of Electrical Engineering & Computer Sciences, University of California, IEEE/SEMI Advanced Semiconductor Manufacturing Conference, 1992, pp. 143-147.
Zhi-Min Ling et al., In-Line Supervisory Control in a Photolithographic Workcell, Department of Electrical Engineering and Computer Sciences, University of California, Advanced Techniques for Integrated Circuit Processing, 1990, pp. 660-669, SPIE vol. 1392.
Dr. Mark Liu, APC From a Foundry Perspective, Empowering Innovation, AEC/APC Symposium XV, Sep. 2003, 27 pages.
Sonny Maung et al., Integration of In Situ Spectral Ellipsometry with MMST Machine Control, IEEE Transactions on Semiconductor Manufacturing May 1994, pp. 184-192, vol. 7, No. 2.
J. Przybyla et al., A Fully Integrated Photolithography Workcell, Northwest Integrated Circuits Division, Hewlett-Packard, International Semiconductor Manufacturing Science Symposium, '89, pp. 100-107.
Leveraging the Quantum Nature of Materials, 50th Anniversary Perspectives, Solid State Technology, Delivering Surface Conditioning Technology for Real-World Advantages, Nov. 2007, 19 pages, Pennwell Corporation.
Z. Sui et al., Integrated Process Control Using an In Situ Sensor for Etch, Solid State Technology, Apr. 2002, 4 pages, PennWell Corporation.
Mong-Song Liang, AEC/APC Challenges—Today and in the Future -, Advanced Module Technology Division/RD TSMC, Empowering Innovation, Dec. 7, 2004, 26 pages.
Cheung Sun et al., Run to Run Control Application in Diffusion, Symposium XIV, Sep. 8-10, 2002, 17 pages, Utah.
June-Shien Lin et al., Cu Interconnect Sheet Resistance Enhancement by Advanced Process Control, AEC/APC Symposium XV, Sep. 13-18, 2003, 11 pages, Colorado.
Jonathan Chang, Consideration for APC Strategy Development, AEC/APC Symposium XV, Sep. 13-18, 2003, 13 pages, Colorado.
K. Hui, Ph.D., A Review of Basic Run-to-Run Controllers from an Internal Model Control Perspective, AEC/APC Symposium—Asia, 2004, 25 pages, HsinChu, Taiwan.
C.W. Hsu et al., The Challenges of Implementing APC in the Foundry, AEC/APC Symposium XV1, Sep. 18-23, 2004, 21 pages, Colorado.
Francis Ko et al. Advanced Process Control Through Virtual Metrology, AEC/APC Symposium-Asia, 2005, 12 pages, HsinChu, Taiwan.
C.I. Sun et al., Integrating CVD-Photo-Etch Advanced Process Control, Symposium XIV, Sep. 8-10, 2002, 18 pages, Utah.

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