Etching a substrate: processes – Gas phase etching of substrate – With measuring – testing – or inspecting
Patent
1994-01-28
1995-10-17
Dang, Thi
Etching a substrate: processes
Gas phase etching of substrate
With measuring, testing, or inspecting
156345, 427 8, 118692, 118723E, 118723I, G01R 2900
Patent
active
054587328
ABSTRACT:
A plasma processing system 10 for fabricating a semiconductor wafer 24 is disclosed. The system includes a plasma processing tool 12 and an RF energy source 20 coupled to the plasma processing tool 12. An optional matching network 22 may be included between the RF energy source 20 and the plasma processing tool 12. Circuitry 18 for monitoring the RF energy to obtain a measurement characteristic is also provided. At least one transducer 14 or 16 is coupled between the plasma processing tool 12 and the circuitry 18 for monitoring the RF energy. The RF energy is typically applied at a fundamental frequency and the electrical characteristic is monitored at a second frequency different than the fundamental frequency. Also included is circuitry 19, such as a computer, for interpreting the measurement to determine a condition of the processing system 10. Other systems and methods are also disclosed.
REFERENCES:
patent: 4166783 (1979-09-01), TGurner
patent: 4207137 (1980-06-01), Tretola
patent: 4340456 (1982-07-01), Robinson et al.
patent: 4602981 (1986-07-01), Chen et al.
patent: 4622094 (1986-11-01), Otsubo
patent: 4665315 (1987-05-01), Bacchetti et al.
patent: 4859277 (1989-08-01), Barna et al.
patent: 4949670 (1990-08-01), Krogh
patent: 4954212 (1990-09-01), Gabriel et al.
patent: 5068002 (1991-11-01), Monroe
patent: 5102687 (1992-04-01), Pelletier et al.
patent: 5106663 (1992-05-01), Mase et al.
patent: 5108569 (1992-04-01), Gilboa et al.
H. F. Dylla, "Glow discharge techniques for conditioning high-vacuum systems", J. Vac. Sci. Technol. A, vol. 6, No. 3, May/Jun. 198, pp. 1276-1287.
W. R. McKinney et al., "Plasma Discharge Cleaning of Replica Gratings Contaminated by Synchrontron Radiation", Nuclear Instruments and Methods, 195, (1982), pp. 371-374.
R. L. Shannon et al., "Active Cleaning Technique Device", Design Study Summary Report D180-15454-1, Mar. 1973, pp. i-60.
T. Lohner et al., "Short Communication--The Role of Surface Cleaning in the Ellipsometric Studies of Ion-Implanted Silicon", Radiation Effects, 1981, vol. 54, pp. 251-252.
M. P. Splichal et al., "Application of chemometrics to optical emission spectroscopy for plasma monitoring", Department of Chemical and Nuclear Engineering, Univ. of N. Mexico.
The Bendix Corp. paper, "End-of Process Detection for Plasma Cleaning", Microelectronics Measurement and Test Conference, Mar. 23-24, 1982, San Jose, Calif.
Brankner Keith J.
Butler Stephanie W.
Dang Thi
Donaldson Richard L.
Hiller William E.
Rutkowski Peter T.
Texas Instruments Incorporated
LandOfFree
Method and system for identifying process conditions does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and system for identifying process conditions, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and system for identifying process conditions will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-593977