Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2004-08-04
2008-10-07
Chen, Jack (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S412000
Reexamination Certificate
active
07432566
ABSTRACT:
A method is provided for forming dual work function gate electrodes. A dielectric layer is provided outwardly of a substrate. A metal layer is formed outwardly of the dielectric layer. A silicon-germanium layer is formed outwardly of the metal layer. A first portion of the silicon-germanium layer is removed to expose a first portion of the metal layer, with a second portion of the silicon-germanium layer remaining over a second portion of the metal layer. A silicon-germanium metal compound layer is formed from the second portion of the silicon-germanium layer and the second portion of the metal layer. A first gate electrode comprising the first portion of the metal layer is formed. A second gate electrode comprising the silicon-germanium metal compound layer is formed.
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Rotondaro Antonio L. P.
Visokay Mark R.
Brady III Wade J.
Chen Jack
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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