Method and system for forming a feature in a high-k layer

Details Method and system for forming a feature in a high-k layer Method and system for forming a feature in a high-k layer

2008-04-22

2008-04-22

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S240000, C438S287000, C438S785000, C257S021000

Reexamination Certificate

active

10954104

ABSTRACT:
A method for plasma processing a high-k layer includes providing a substrate having a high-k layer formed thereon, on a substrate holder in a process chamber, and creating a plasma in the process chamber to thereby expose the high-k layer to the plasma. RF power is applied to the substrate holder, the RF power having a characteristic to reduce a rate of formation of an oxide interface layer located between the substrate and the high-k layer. A device includes a feature etched in a high-k layer. The etch profile of the device can include a reduced bird's beak, and a surface of the substrate in an etched region can be substantially coplanar with a substrate under a non-etched area.

REFERENCES:
patent: 6348420 (2002-02-01), Raaijmakers et al.
patent: 6696327 (2004-02-01), Brask et al.
patent: 6709715 (2004-03-01), Lang et al.
patent: 6727148 (2004-04-01), Setton
patent: 6750126 (2004-06-01), Visokay et al.
patent: 6787440 (2004-09-01), Parker et al.
patent: 6787861 (2004-09-01), Lucovsky et al.
patent: 6806095 (2004-10-01), Nallan et al.
patent: 2001/0031562 (2001-10-01), Raaijmakers et al.
patent: 2002/0115252 (2002-08-01), Haukka et al.
patent: 2002/0172768 (2002-11-01), Endo et al.
patent: 2003/0060057 (2003-03-01), Raaijmakers et al.
patent: 2004/0043557 (2004-03-01), Haukka et al.
patent: 2004/0178169 (2004-09-01), Desphande et al.
patent: 2005/0014380 (2005-01-01), Kai et al.
patent: 2005/0074978 (2005-04-01), Wang et al.
patent: 2005/0106893 (2005-05-01), Wilk
patent: 2005/0124109 (2005-06-01), Quevedo-Lopez et al.
patent: 2005/0196915 (2005-09-01), Jeong et al.
patent: 2005/0205969 (2005-09-01), Ono et al.
patent: 2005/0255711 (2005-11-01), Sugawara et al.
patent: 2005/0274948 (2005-12-01), Tamura et al.
patent: 2005/0282400 (2005-12-01), Xiao et al.
patent: 2006/0001071 (2006-01-01), Brask et al.
patent: 2006/0006522 (2006-01-01), Doczy et al.
patent: 2006/0032585 (2006-02-01), Kai et al.
Nitrogen plasma annealing for low temperature Ta2O5 films, Alers G. B. et al., Applied Physics Letters—Mar. 16, 1998—vol. 72, Issue 11, pp. 1308-1310.
I. Popoya, et al., “Electrostatic Field Enhancement of A1(111) Oxidation”, Physical Review Letters, vol. 89, No. 27 Dec. 30, 2002, pp. 276101-1-276101-4.

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