Method and system for forming a feature in a high-k layer

Details Method and system for forming a feature in a high-k layer Method and system for forming a feature in a high-k layer

2008-04-22

2008-04-22

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S240000, C438S287000, C438S785000, C257S021000

Reexamination Certificate

active

07361608

ABSTRACT:
A method for plasma processing a high-k layer includes providing a substrate having a high-k layer formed thereon, on a substrate holder in a process chamber, and creating a plasma in the process chamber to thereby expose the high-k layer to the plasma. RF power is applied to the substrate holder, the RF power having a characteristic to reduce a rate of formation of an oxide interface layer located between the substrate and the high-k layer. A device includes a feature etched in a high-k layer. The etch profile of the device can include a reduced bird's beak, and a surface of the substrate in an etched region can be substantially coplanar with a substrate under a non-etched area.

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