Method and system for forming a controllable gate oxide

Details Method and system for forming a controllable gate oxide Method and system for forming a controllable gate oxide

2008-03-20

2010-12-14

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S770000, C438S775000, C438S431000

Reexamination Certificate

active

07851383

ABSTRACT:
Method and system for forming gate structure with controllable oxide. The method includes a step for providing a semiconductor substrate and defining a source region and a drain region within the semiconductor substrate. Furthermore, the method includes a step for defining a gate region positioned between the source region and the drain region. Moreover, the method provides a step for forming a first layer overlaying the gate region. The first layer includes silicon nitride and/or silicon oxynitride material. Also, the method includes a step for forming a second layer by subjecting the semiconductor substrate to at least oxygen at a predetermined temperature range for a period of time. The second layer has a thickness less than 20 Angstroms.

REFERENCES:
patent: 2007/0122981 (2007-05-01), Park
patent: 2007/0218606 (2007-09-01), Ozawa et al.
patent: 2008/0121932 (2008-05-01), Ranade
patent: 1214540 (1999-04-01), None
patent: 1400634 (2003-03-01), None
patent: 1459829 (2003-12-01), None
patent: 1770402 (2006-05-01), None

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