Method and system for drying a substrate

Details Method and system for drying a substrate Method and system for drying a substrate

2006-07-04

2006-07-04

McPherson, John A. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

C430S330000, C430S329000, C355S067000, C355S072000

Reexamination Certificate

active

07070915

ABSTRACT:
A method and system is described for drying a thin film on a substrate following liquid immersion lithography. Drying the thin film to remove immersion fluid from the thin film is performed prior to baking the thin film, thereby reducing the likely hood for interaction of immersion fluid with the baking process. This interaction has been shown to cause non-uniformity in critical dimension for the pattern formed in the thin film following the developing process.

REFERENCES:
patent: 5986742 (1999-11-01), Straaijer et al.
patent: 2002/0163629 (2002-11-01), Switkes et al.
patent: 2005/0007567 (2005-01-01), Pierrat et al.
patent: 2005/0036184 (2005-02-01), Yeo et al.
Owen et al., “1/8 μm optical lithography,” Journal of Vacuum Science and Technology, B 10(6), 3032-3036 (1992).
Switkes et al., “Immersion lithography at 157 nm,” Journal of Vacuum Science and Technology, B 19(6), 2353-2356 (2001).
Hoffnagle et al., “Liquid immersion deep-ultraviolet interferometric lithography,” Journal of Vacuum Science and Technology, B 17(6), 3306-3309 (1999).

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