Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-06-20
2006-06-20
Trinh, Michael (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S199000, C438S382000, C438S216000
Reexamination Certificate
active
07064027
ABSTRACT:
An etch resistant liner covering sidewalls of a transistor gate stack and along a portion of the substrate at a base of the transistor gate stack. The liner prevents silicide formation on the sidewalls of the gate stack, which may produce electrical shorting, and determines the location of silicide formation within source and drain regions within the substrate at the base of the transistor gate stack. The liner also covers a resistor gate stack preventing silicide formation within or adjacent to the resistor gate stack.
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Ng Hung Y.
Yang Haining S.
International Business Machines - Corporation
Novacek Christy
Schmeiser Olsen & Watts
Steinberg William H.
Trinh Michael
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