Method and structure to prevent silicide strapping of...

Details Method and structure to prevent silicide strapping of... Method and structure to prevent silicide strapping of...

2005-07-16

2008-07-29

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S285000, C438S299000, C438S303000, C438S471000, C438S518000, C257SE21193, C257SE21402, C257SE21131

Reexamination Certificate

active

07405131

ABSTRACT:
The example embodiments disclose devices and methods to prevent silicide strapping of the Source/Drain to Body in semiconductor devices with S/D stressor. We provide isolation regions in the substrate and a gate structure over the substrate. We form recesses in the substrate adjacent to the gate structure with disposable spacers and adjacent to the isolation regions. We provide stressor regions filling the recesses. The stress region can have a pit adjacent the isolation regions. We form stressor spacers at least partially in the pit on the sidewalls of the stressor regions. We form silicide regions over the stressor regions. The spacer on the stressor regions sidewalls inhibit the formation of silicide at the stressor region edge during the silicide process, thus preventing silicide strapping of the Source/Drain to Body.

REFERENCES:
patent: 6093593 (2000-07-01), Jang
patent: 6531347 (2003-03-01), Huster
patent: 6861318 (2005-03-01), Murthy
patent: 6881635 (2005-04-01), Chidambarrao et al.
patent: 7018901 (2006-03-01), Thean et al.
patent: 7268362 (2007-09-01), Wang et al.
patent: 7282415 (2007-10-01), Zhang et al.
patent: 2002/0137295 (2002-09-01), Thei
patent: 2005/0035409 (2005-02-01), Ko

Affiliated with

Also associated with

Rating

Method and structure to prevent silicide strapping of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and structure to prevent silicide strapping of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and structure to prevent silicide strapping of... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3963820