Method and structure to decrease area capacitance within a...

Details Method and structure to decrease area capacitance within a... Method and structure to decrease area capacitance within a...

2006-08-15

2006-08-15

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S298000

Reexamination Certificate

active

07091560

ABSTRACT:
Method and structure to decrease area capacitance within a buried insulator device structure are disclosed. A portion of the substrate layer of a buried insulator structure opposite the insulator layer from the gate is doped with the same doping polarity as the source and drain regions of the device, to provide reduced area capacitance. Such doping may be limited to portions of the substrate which are not below the gate.

REFERENCES:
patent: 5369295 (1994-11-01), Vinal
patent: 5814869 (1998-09-01), Dennen
patent: 5923067 (1999-07-01), Voldman

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