Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure
Reexamination Certificate
2007-01-30
2007-01-30
Tran, Long (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Test or calibration structure
C257SE21524, C324S765010
Reexamination Certificate
active
10929209
ABSTRACT:
A test structure and a test methodology are provided for testing metal-insulator-metal (MIM) capacitor structures under high temperatures at the wafer level. The test structure includes a resistor formed on a region of dielectric isolation material formed in a semiconductor substrate. The MIM capacitor is formed over the resistor and separated therefrom by dielectric material. A metal thermometer, formed from the same material as the plates of the MIM capacitor, is placed above the resistor and in close proximity to the capacitor. High current is forced through the resistor, causing both the metal thermometer and the MIM capacitor to heat up along with the resistor. The change in resistance of the metal thermometer is monitored. Using the known temperature coeffecient of resistance (TCR) for the metal used to form both the capacitor and the thermometer, changes in the measured resistance of the metal thermometer are converted to temperature.
REFERENCES:
patent: 6344964 (2002-02-01), Adler
patent: 2003/0116823 (2003-06-01), Yoneda
Chaparala Prasad
Kim Jonggook
O'Connell Barry
National Semiconductor Corporation
Stallman & Pollock LLP
Tran Long
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