Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-09-05
2006-09-05
Whitehead, Jr., Carl (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S757000, C257SE23001
Reexamination Certificate
active
07102234
ABSTRACT:
A method of reducing the contact resistance of metal silicides to the p+ silicon area or the n+ silicon area of the substrate comprising: (a) forming a metal germanium (Ge) layer over a silicon-containing substrate, wherein said metal is selected from the group consisting of Co, Ti, Ni and mixtures thereof; (b) optionally forming an oxygen barrier layer over said metal germanium layer; (c) annealing said metal germanium layer at a temperature which is effective in converting at least a portion thereof into a substantially non-etchable metal silicide layer, while forming a Si—Ge interlayer between said silicon-containing substrate and said substantially non-etchable metal silicide layer; and (d) removing said optional oxygen barrier layer and any remaining alloy layer. When a Co or Ti alloy is employed, e.g., Co—Ge or Ti—Ge, two annealing steps are required to provide the lowest resistance phase of those metals, whereas, when Ni is employed, a single annealing step forms the lowest resistance phase of Ni silicide.
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Cabral, Jr. Cyril
Carruthers Roy Arthur
Harper James McKell Edwin
Lavoie Christian
Roy Ronnen Andrew
Doty Heather
International Business Machines - Corporation
Jr. Carl Whitehead
Scully , Scott, Murphy & Presser, P.C.
Trepp, Esq. Robert M.
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