Method and structure for reducing leakage current in capacitors

Details Method and structure for reducing leakage current in capacitors Method and structure for reducing leakage current in capacitors

2005-04-19

2005-04-19

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S775000, C438S287000

Reexamination Certificate

active

06881682

ABSTRACT:
A method of forming a capacitor with reduced leakage current on a substrate in a semiconductor device is set forth. A first layer of a conductive material is formed over the substrate, and a second layer of a dielectric is formed over the first layer. The second layer is contacted with hydrogen, oxygen and nitrous oxide gases to form an oxidation layer over the second layer. A third layer of a conductive material is formed over the second layer to thereby form the capacitor. While the capacitor exhibits an improved leakage current reduction, overall capacitance is substantially unaffected, as compared to a similar capacitor having an oxidation layer built from a combination of oxygen and hydrogen gases only.

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Michael J. Hartig et al, “A Model for the Gas-Phase Chemistry Occuring in a Furnace N2O Oxynitride Process,”J. Electrochem. Soc., vol. 143, No. 5, May 1996, pp. 1753-1762.

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