Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-09-11
2007-09-11
Coleman, William David (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21443
Reexamination Certificate
active
11340354
ABSTRACT:
A field effect transistor (FET) comprising an isolation layer, a source region positioned over the isolation layer, a drain region positioned over the isolation layer, a bifurcated silicide gate region positioned over the channel region, and a gate oxide layer adjacent to the gate region, wherein the gate oxide layer comprises an alkali metal ion implanted at a dosage calculated based on threshold voltage test data provided by a post silicide electrical test conducted on said FET, wherein the alkali metal ion comprises any of cesium and rubidium.
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Anderson Brent A.
Nowak Edward J.
Coleman William David
Gibb & Rahman, LLC
Sabo, Esq. William D.
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