Method and structure for non-single-polycrystalline...

Details Method and structure for non-single-polycrystalline... Method and structure for non-single-polycrystalline...

2006-08-29

2006-08-29

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

Reexamination Certificate

active

07098103

ABSTRACT:
A method of forming a non-single-crystalline capacitor in an integrated circuit. It includes the steps of forming a first non-single-crystalline layer on a gate dielectric layer of a substrate of an integrated circuit. Next, a capacitor dielectric layer is formed on the first non-single-crystalline layer, and a second non-single-crystalline layer is formed on the capacitor dielectric layer. Portions of the second non-single-crystalline layer are removed to define a top plate of the capacitor. Portions of the capacitor dielectric layer are removed to define a dielectric of the capacitor. Also, portions of the first non-single-crystalline layer are removed to define the bottom plate of the capacitor.

REFERENCES:
patent: 5110752 (1992-05-01), Lu
patent: 5126280 (1992-06-01), Chan et al.
patent: 5166090 (1992-11-01), Kim et al.
patent: 5173437 (1992-12-01), Chi
patent: 5262343 (1993-11-01), Rhodes et al.
patent: 5550077 (1996-08-01), Tseng et al.
patent: 6420222 (2002-07-01), Watanabe

Affiliated with

Also associated with

Rating

Method and structure for non-single-polycrystalline... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and structure for non-single-polycrystalline..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and structure for non-single-polycrystalline... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3715611