Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-04-21
2000-06-13
Dang, Trung
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438218, 438221, 438224, 438230, 438231, H01L 218238
Patent
active
060749040
ABSTRACT:
A method for isolating semiconductor devices comprising providing a semiconductor substrate. The semiconductor substrate includes a first pair of source/drain regions on either side of a first channel region and a second pair of source/drain regions on either side of a second channel region. One of the first pair of source/drain regions is proximal to one of the second pair of source/drain regions. First and second laterally displaced MOS transistors are formed partially within the semiconductor substrate. An isolation trench is formed through the proximal source/drain regions and the trench is filled with a trench dielectric material such that the proximal source/drain regions are electrically isolated whereby the first transistor is electrically isolated from the second transistor.
REFERENCES:
patent: 5387534 (1995-02-01), Prall
patent: 5677224 (1997-10-01), Kadosh et al.
patent: 5827761 (1998-10-01), Fulford, Jr. et al.
patent: 5849621 (1998-12-01), Gardner et al.
patent: 5874328 (1999-02-01), Liu et al.
patent: 5877050 (1999-03-01), Gardner et al.
Dawson Robert
Gardner Mark I.
Michael Mark W.
Spikes, Jr. Thomas E.
Advanced Micro Devices , Inc.
Daffer Kevin L.
Dang Trung
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