Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-11-22
2005-11-22
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S270000, C438S386000, C438S387000
Reexamination Certificate
active
06967136
ABSTRACT:
A method is provided for making a trench capacitor by forming a trench in a substrate. The trench is then widened and a sacrificial collar is formed on sidewalls of the widened trench. The trench is then vertically deepened to extend below the sidewalls of the sacrificial collar. Subsequently, a capacitor is formed in the trench below the sacrificial collar. An integrated circuit includes a deep trench structure formed in a single-crystal region of a semiconductor substrate including an upper trench portion, the upper trench portion having an opening of rectangular shape. A lower trench portion is formed below the upper trench portion. The lower portion may be widened to have a bottle shape. Alternatively, the upper trench portion may be widened relative to the lower trench portion.
REFERENCES:
patent: 5482883 (1996-01-01), Rajeevakumar
patent: 5930107 (1999-07-01), Rajeevakumar
patent: 6180480 (2001-01-01), Economikos et al.
patent: 6190988 (2001-02-01), Furukawa et al.
patent: 6359300 (2002-03-01), Economikos et al.
patent: 6362040 (2002-03-01), Tews et al.
patent: 6426254 (2002-07-01), Kudelka et al.
patent: 6599798 (2003-07-01), Tews et al.
patent: 6660582 (2003-12-01), Birner et al.
patent: 6716696 (2004-04-01), Chen et al.
patent: 6723611 (2004-04-01), Akatsu et al.
patent: 6762099 (2004-07-01), Yu-Sheng et al.
patent: 6767786 (2004-07-01), Lin et al.
patent: 6872620 (2005-03-01), Chidambarrao et al.
patent: 6905944 (2005-06-01), Chudzik et al.
patent: 2003/0045052 (2003-03-01), Birner et al.
patent: 2003/0194867 (2003-10-01), Kudelka et al.
patent: 2004/0197965 (2004-10-01), Birner et al.
Akatsu Hiroyuki
Cheng Kangguo
Settlemyer Kenneth
International Business Machines - Corporation
Neff Daryl K.
Nguyen Khiem
Schnurmann H. Daniel
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