Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation
Reexamination Certificate
2005-11-15
2009-06-16
Tran, Thien F (Department: 2895)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Total dielectric isolation
C438S455000, C438S459000
Reexamination Certificate
active
07547609
ABSTRACT:
A process for forming multi-layered substrates, e.g., silicon on silicon. The process includes providing a first substrate, which has a thickness of material to be removed. The thickness of material to be removed includes a first face region. The process includes joining the first face region of the first substrate to a second face region of a second substrate to form an interface region between the first face region of the first substrate and the second face region of the second substrate. The process includes removing the thickness of material from the first substrate while maintaining attachment of the first face region of the first substrate to the second face region of the second substrate. The process implants particles through the interface region to form a region of the particles within the vicinity of the interface region to electrically couple the thickness of material to the second substrate. In a preferred embodiment, the particles are conductive or can also have other characteristics that facilitates electrical contact or coupling between the first face region and the second face region according to a specific embodiment.
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Silicon Genesis Corporation
Townsend and Townsend / and Crew LLP
Tran Thien F
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