Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-07-29
2009-12-22
Nguyen, Dao H (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
Reexamination Certificate
active
07635884
ABSTRACT:
A magnetic random access memory (MRAM) device includes a magnetic tunnel junction (MTJ) stack formed over a lower wiring level, a hardmask formed on the MTJ stack, and an upper wiring level formed over the hardmask. The upper wiring level includes a slot via bitline formed therein, the slot via bitline in contact with the hardmask and in contact with an etch stop layer partially surrounding sidewalls of the hardmask.
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Extended PCT Search Report Application No. 06788341.3—2203 / 1911096 PCT /US2006028718 Mailed Sep. 23, 2008.
Clevenger Lawrence A.
Dalton Timothy J.
Gaidis Michael C.
Hon Wong Keith Kwong
Hsu Louis L. C.
Cantor & Colburn LLP
International Business Machines - Corporation
Nguyen Dao H
Nguyen Tram H
Percello Lou
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