Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-05-20
2008-05-20
Sarkar, Asok K (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257S738000, C257S780000, C257SE21508
Reexamination Certificate
active
07375021
ABSTRACT:
A method for far back end of line (FBEOL) semiconductor device formation includes forming a terminal copper pad in an upper level of a semiconductor wafer, forming an insulating stack over the terminal copper pad, and patterning and opening a terminal via within a portion of the insulating stack so as to leave a bottom cap layer of the insulating stack protecting the terminal copper pad. An organic passivation layer is formed and patterned over the top of the insulating stack, and the bottom cap layer over the terminal copper pad is removed. A ball limiting metallurgy (BLM) stack is deposited over the organic passivation layer and terminal copper pad, and a solder ball connection is formed on a patterned portion of the BLM stack.
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Edelstein Daniel C.
Farooq Mukta G.
Hannon Robert
Melville Ian D.
Cantor & Colburn LLP
International Business Machines - Corporation
Petrokaitis Joseph
Sarkar Asok K
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