Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-10-07
2008-09-16
Nguyen, Cuong Q (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S347000
Reexamination Certificate
active
07425740
ABSTRACT:
A one transistor (1T-RAM) bit cell and method for manufacture are provided. A metal-insulator-metal (MIM) capacitor structure and method of manufacturing it in an integrated process that includes a finFET transistor for the 1T-RAM bit cell is provided. In some embodiments, the finFET transistor and MIM capacitor are formed in a memory region and an asymmetric processing method is disclosed, which allows planar MOSFET transistors to be formed in another region of a single device. In some embodiments, the 1T-RAM cell and additional transistors may be combined to form a macro cell, multiple macro cells may form an integrated circuit. The MIM capacitors may include nanoparticles or nanostructures to increase the effective capacitance. The finFET transistors may be formed over an insulator. The MIM capacitors may be formed in interlevel insulator layers above the substrate. The process provided to manufacture the structure may advantageously use conventional photomasks.
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Chang Chang-Yun
Chen Hung-Wei
Hsu Ju-Wang
Liu Sheng-Da
Xuan Zhong Tang
Nguyen Cuong Q
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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