Method and resulting structure using silver for LCOS devices

Details Method and resulting structure using silver for LCOS devices Method and resulting structure using silver for LCOS devices

2011-01-04

2011-01-04

Luu, Chuong A. (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S225000, C438S439000, C438S362000

Reexamination Certificate

active

07863145

ABSTRACT:
A method for fabricating an LCOS device. The method includes providing a semiconductor substrate and forming a plurality of MOS transistor devices formed on a portion of the semiconductor substrate. The method includes forming a first dielectric layer overlying the plurality of transistor devices and forming a first metal layer overlying the first dielectric layer. The method includes forming a second dielectric layer overlying the first metal layer and forming a plurality of pixel regions made substantially of silver bearing material overlying the second dielectric layer. In a preferred embodiment, the silver bearing material has much higher reflectivity for wavelengths of 450 nanometers and greater.

REFERENCES:
patent: 2004/0036824 (2004-02-01), Lee
patent: 2005/0164470 (2005-07-01), Yamazaki et al.

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