Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2005-01-25
2005-01-25
Loke, Steven (Department: 2811)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S199000, C438S587000, C438S588000, C438S652000, C438S655000, C438S649000, C438S651000, C438S664000
Reexamination Certificate
active
06846734
ABSTRACT:
Methods of forming complementary metal oxide semiconductor (CMOS) devices having multiple-threshold voltages which are easily tunable are provided. Total salicidation with a metal bilayer (representative of the first method of the present invention) or metal alloy (representative of the second method of the present invention) is provided. CMOS devices having multiple-threshold voltages provided by the present methods are also described.
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Amos Ricky
Barmak Katayun
Boyd Diane C.
Cabral, Jr. Cyril
Kanarsky Thomas S.
Loke Steven
Scully Scott Murphy & Presser
Trepp, Esq. Robert M.
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