Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2004-09-07
2009-06-09
Wilczewski, M. (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S597000, C438S658000
Reexamination Certificate
active
07544610
ABSTRACT:
The present invention provides a method for forming a self-aligned Ni alloy silicide contact. The method of the present invention begins by first depositing a conductive Ni alloy with Pt and optionally at least one of the following metals Pd, Rh, Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, W or Re over an entire semiconductor structure which includes at least one gate stack region. An oxygen diffusion barrier comprising, for example, Ti, TiN or W is deposited over the structure to prevent oxidation of the metals. An annealing step is then employed to cause formation of a NiSi, PtSi contact in regions in which the metals are in contact with silicon. The metal that is in direct contact with insulating material such as SiO2and Si3N4is not converted into a metal alloy silicide contact during the annealing step. A selective etching step is then performed to remove unreacted metal from the sidewalls of the spacers and trench isolation regions.
REFERENCES:
patent: 6432836 (2002-08-01), Watanabe
patent: 2002/0098689 (2002-07-01), Chong et al.
patent: 2004/0123922 (2004-07-01), Cabral et al.
Cabral, Jr. Cyril
Cobb Michael A.
Frye Asa
Knarr Randolph F.
Krishnan Mahadevaiyer
International Business Machines - Corporation
Perkins Pamela E
Scully , Scott, Murphy & Presser, P.C.
Trepp, Esq. Robert M.
Wilczewski M.
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