Method and instrument for chemical defect characterization...

Radiant energy – Inspection of solids or liquids by charged particles

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C250S307000, C250S310000, C250S305000, C250S492200, C250S492300

Reexamination Certificate

active

07635842

ABSTRACT:
A method and the instrument for characterization of the defects on a surface with Auger electron spectroscopy in a high vacuum environment are disclosed. Defects on the surface of a sample may be characterized with Auger electron spectroscopy in a high vacuum environment.

REFERENCES:
patent: 6294469 (2001-09-01), Kulkarni et al.
patent: 6661515 (2003-12-01), Worster et al.
patent: 6753261 (2004-06-01), Phan et al.
patent: 7097708 (2006-08-01), Clark et al.
patent: 2007/0194251 (2007-08-01), Ward et al.
patent: WO 99/35668 (1999-01-01), None
U.S. Appl. No. 11/622,625 entitled “Structural Modification Using Electron Beam Activated Chenial Etch” filed Jan. 12, 2007.
U.S. Appl. No. 60/890,512 entitled “Method and Instrument for Chemical Defect Characteriszation in High Vacuum” filed Feb. 19, 2007.
M. Jacka et al., “A fast, parallel acquisition, electron energy analyzer: The hyperbolic field analyzer”, Review of Scientific Instrument, vol. 70, No. 5, May 1999. pp. 2282-2287.
International Search Report and Written Opinion of the International Searching Authority dated Jul. 18, 2008—International Patent Application No. PCT/ US08/54155.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method and instrument for chemical defect characterization... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and instrument for chemical defect characterization..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and instrument for chemical defect characterization... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4109396

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.