Method and fabricating a self-aligned node contact window

Details Method and fabricating a self-aligned node contact window Method and fabricating a self-aligned node contact window

1998-10-28

2000-10-31

Elms, Richard

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438254, 438396, 438246, H01L 218242

Patent

active

061401765

ABSTRACT:
A method of fabricating a self-aligned node contact window starts by forming a bit line on a substrate having a transistor, in which the transistor includes a first source/drain region and a second source/drain region. The bit line is coupled electrically with the first source/drain region of the transistor and there is a cap layer and a first conductive layer formed on the bit line. An insulating layer that is conformal with the bit line, the cap layer and the first conductive layer is formed to serve as an etching stop layer for subsequently forming a conductive spacer. A conductive spacer is formed on the insulating layer of the sidewall of the bit line, the cap layer and the first conductive layer. Using the first conductive layer and the conductive spacer as a mask, an etching process is performed to form a self-aligned node contact window and the second source/drain is thus exposed.

REFERENCES:
patent: 5422315 (1995-06-01), Kobayashi
patent: 5466637 (1995-11-01), Kim
patent: 5946568 (1999-08-01), Hsiao et al.

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