Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2003-01-20
2010-11-09
Nguyen, Thanh (Department: 2893)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S265000, C438S770000, C257SE29226, C257SE29241
Reexamination Certificate
active
07829411
ABSTRACT:
The present invention relates to a method for forming high quality oxide layers of different thickness over a first and a second semiconductor region in one processing step. The method comprises the steps of:doping the first and the second semiconductor region with a different dopant concentration, andoxidising, during the same processing step, both the first and the second semiconductor region under a temperature between 500° C. and 700° C., preferably between 500° C. and 650° C.A corresponding device is also provided.Using a low-temperature oxidation in combination with high doping levels results in an unexpected oxidation rate increase.
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Patent Abstracts of Japan, vol. 006, No. 037 (E-097), Mar. 6, 1982.
Loo Josine Johanna Gerarda Petra
Ponomarev Youri
Schaijk Robertus Theodorus Fransiscus
Nguyen Thanh
NXP B.V.
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