Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from gaseous state combined with preceding...
Reexamination Certificate
2007-07-17
2007-07-17
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth from gaseous state combined with preceding...
C257SE21102
Reexamination Certificate
active
10484975
ABSTRACT:
System for producing diffusion-inhibiting epitaxial semiconductor layers, by means of which thin diffusion-inhibiting, epitaxial semiconductor layers can be produced on large semiconductor substrates at a high throughput.The surfaces of the semiconductor substrates to be coated are first cleaned, and the substrates are then heated in a low pressure batch reactor to a first temperature (prebake temperature). The surfaces to be coated are next subjected to a hydrogen prebake operation at a first reactor pressure. In the next step the semiconductor substrates are heated in a low pressure hot or warm wall batch reactor to a second temperature (deposition temperature) lower than the first temperature, and after a condition of thermodynamic equilibrium is reached the diffusion-inhibiting semiconductor layers are deposited on the surfaces to be coated in a chemical gaseous deposition process (CVD) at a second reactor pressure higher than, equal to or lower than the first reactor pressure.
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Grabolla Thomas
Ritter Georg
Tillack Bernd
Wolansky Dirk
Dolan Jennifer M.
IHP GmbH - Innovations for High Performance Microelectronics
Jr. Carl Whitehead
Ware Fressola Van Der Sluys & Adolphson LLP
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