Static information storage and retrieval – Read/write circuit – Testing
Reexamination Certificate
2007-10-02
2007-10-02
Phung, Anh (Department: 2824)
Static information storage and retrieval
Read/write circuit
Testing
C365S193000
Reexamination Certificate
active
10487255
ABSTRACT:
A test method for a semiconductor memory device having a bidirectional data strobe terminal for a data strobe signal, and having at least one data terminal for a data signal at a test apparatus, which can at least generate data strobe and data signals and also transfer and evaluate data signals. The memory device is connected to a test apparatus, which generates data strobe and data signals, and transfers and evaluates data signals. In the course of the test using the data strobe and data signals, data are transferred from the first semiconductor memory device to a second semiconductor memory device of identical type and are evaluated after a read-out from the second semiconductor memory device by the test apparatus.
REFERENCES:
patent: 6195616 (2001-02-01), Reed et al.
patent: 6339555 (2002-01-01), Hamada et al.
patent: WO 02/39459 (2002-05-01), None
Article by Christof Windeck: Dopplereffekt. In: c't Magazin fur Computertechnik, Heft 23, Nov. 2000, S. 162-166.
German Office Action dated Jul. 26, 2002.
Cordes Eric
Eggers Georg Erhard
Luepke Jens
Stocken Christian
Infineon - Technologies AG
Nguyen N
Phung Anh
Slater & Matsil L.L.P.
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