Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-05-11
2000-10-24
Booth, Richard
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438593, H01L 218247
Patent
active
061366536
ABSTRACT:
A method and resulting integrated circuit device (100) such as a flash memory device and resulting cell. The method includes a step of providing a substrate (115), which has an active region overlying a thin layer of dielectric material (113). The method uses a step of forming a floating gate layer (107) overlying the thin layer of dielectric material (113), which is commonly termed a "tunnel oxide" layer, but is not limited to such a layer or material. The floating gate layer (107) has novel geometric features including slant edges (121), which extend to the dielectric material (123). The slant edges (121) create a smaller geometric area for the tunnel oxide region relative to the area between the floating gate layer and the control gate layer.
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Lee Ray C.
Sung Kuo-Tung
Booth Richard
Mosel Vitelic Inc.
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