Method (and device) for producing tunnel silicon oxynitride laye

Details Method (and device) for producing tunnel silicon oxynitride laye Method (and device) for producing tunnel silicon oxynitride laye

1998-02-05

2000-03-21

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438258, 438264, H01L 21336

Patent

active

060402164

ABSTRACT:
A novel method of fabricating a flash memory cell. The present method includes a step of providing a semiconductor substrate (101) having a first active region (111), a second active region (109), and an isolation region (103). The isolation region is defined between the first active region and second active region. The process undergoes a step of masking (105) a portion of the isolation region and the second active region, and introducing (107) a nitrogen bearing impurity by implantation into a surface of the active region. The method also includes removing the portion being masked, e.g., stripping. A step of forming a silicon oxynitride layer (117) from the nitrogen bearing impurity on the surface of the first active region and forming silicon dioxide (115) on the second active region is included.

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